BFX29 telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mechanical data dimensions in mm (inches) pnp silicon epitaxial transistor applications ? general purpose industrial applications 2.54 (0 100, 0.71_|_q.02sj__ 0.5e" electrical characteristics (t, = 25c unless otherwise stated) BFX29 parameter test conditions min. typ. max. unit iebo emitter cut-off current icbo collector cut-off current fe dc current gain collector - emitter ce(sat) saturation voltage vee(sat) base - emitter saturation voltage ctc collector capactitance cte emitter capactitance ft transistion frequency veb = 5.0v veb = 3v vcb =60v vcb =50v vce=10v vce = 10v vce = 10v vce=10v lc=0 lc = 0 ie = o ie = 0 tj=100c lc = 0.1ma lc= 1ma lc= 10ma lc = 50ma vce = 10v lc= 150ma lc = 150ma lc = 30ma lc = 150ma vcb = 10v veb = 2.0v vce = 10v f= 100mhz ib= 15ma ib= 1.0ma ib= 15ma le = le=0 f=1.0mhz lc=ic=0 f=1.0mhz lc = 50ma tamb=25c 30 1.0 1.0 0.5 20 40 50 50 40 100 0.03 90 105 125 125 90 0.15 0.77 1.05 6 18 360 500 100 500 50 2.0 0.40 0.90 1.30 12 30 na na ua ? v v pf mhz thermal characteristics i reth(i-amb) thermal resistance junction to ambient 292
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